| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| STripFET H6 | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 1(Min) | |
| 12.5 | |
| 100 | |
| 1 | |
| 12@10V | |
| 33@4.5V | |
| 3350@25V | |
| 2700 | |
| 45 | |
| 112 | |
| 61 | |
| 12.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SO N |
| 8 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this STS10P3LLH6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 2700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes stripfet h6 technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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