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Infineon Technologies AGSPD03N50C3ATMA1MOSFETs
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 3.9 | |
| 3.2 | |
| 100 | |
| 1 | |
| 1400@10V | |
| 15@10V | |
| 15 | |
| 350@25V | |
| 38000 | |
| 15 | |
| 5 | |
| 70 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.29 mm |
| Package Width | 6.1 mm |
| Package Length | 6.6 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' SPD03N50C3ATMA1 power MOSFET is for you. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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