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onsemiSMMBT5551LT1GGP BJT

Trans GP BJT NPN 160V 0.6A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SMMBT5551LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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30,310 piezas: Se puede enviar mañana

    Total$0.07Price for 1

    • Service Fee  $7.00

      Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2214+
      Manufacturer Lead Time:
      10 semanas
      Minimum Of :
      1
      Maximum Of:
      30310
      Country Of origin:
      China
         
      • Price: $0.0728
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2214+
      Manufacturer Lead Time:
      10 semanas
      Country Of origin:
      China
      • In Stock: 30,310 piezas
      • Price: $0.0728

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