onsemiSMMBT2222ALT1GGP BJT

Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101

This specially engineered NPN SMMBT2222ALT1G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

63,062 piezas: Se puede enviar mañana

    Total$0.21Price for 1

    • Service Fee  $7.00

      Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2332+
      Manufacturer Lead Time:
      41 semanas
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      China
         
      • Price: $0.2111
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2332+
      Manufacturer Lead Time:
      41 semanas
      Country Of origin:
      China
      • In Stock: 62 piezas
      • Price: $0.2111
    • (3000)

      Se puede enviar mañana

      Increment:
      3000
      Ships from:
      Estados Unidos de América
      Date Code:
      2529+
      Manufacturer Lead Time:
      41 semanas
      Country Of origin:
      Malaisia
      • In Stock: 63,000 piezas
      • Price: $0.0350

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