Infineon Technologies AGSMBT3904PNH6327XTSA1GP BJT
Trans GP BJT NPN/PNP 40V 0.2A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 40 | |
| 40 | |
| 6 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
The npn and PNP SMBT3904PNH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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