| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.4 | |
| 30@Channel 1|40@Channel 2 | |
| 100 | |
| 1 | |
| 9.5@10V@Channel 1|5.1@10V@Channel 2 | |
| 12.3@10V|5.6@4.5V@Channel 1|22.6@10V|10.1@4.5V@Channel 2 | |
| 12.3@Channel 1|22.6@Channel 2 | |
| 760@15V@Channel 1|1552@15V@Channel 2 | |
| 3700@Channel 1|4200@Channel 2 | |
| 7 | |
| 55@Channel 1|82@Channel 2 | |
| 16@Channel 1|20@Channel 2 | |
| 13@Channel 1|22@Channel 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 3 mm |
| Package Length | 3 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAIR EP |
| 8 |
Make an effective common gate amplifier using this SIZ340DT-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700@Channel 1|4200@Channel 2 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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