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VishaySI7913DN-T1-GE3MOSFETs
Trans MOSFET P-CH 20V 5A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±8 | |
| 5 | |
| 37@4.5V | |
| 15.3@4.5V | |
| 1300 | |
| 150 | |
| 70 | |
| 72 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the SI7913DN-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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