| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.1 | |
| 40 | |
| 100 | |
| 1 | |
| 3.6@10V | |
| 72@4.5V|150@10V | |
| 150 | |
| 6600@10V | |
| 4800 | |
| 35|25 | |
| 45|10 | |
| 100|110 | |
| 45|13 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.78(Max) mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK EP |
| 8 | |
| Lead Shape | No Lead |
Use Vishay's SI7655ADN-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 4800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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