| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 28 | |
| 41@10V | |
| 54@4.5V|106@10V | |
| 106 | |
| 4600@50V | |
| 5200 | |
| 100 | |
| 20|160 | |
| 100|110 | |
| 15|42 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI7489DP-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 5200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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