| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 40 | |
| ±20 | |
| 3 | |
| 6 | |
| 32@10V | |
| 5.5@4.5V|12.5@10V | |
| 12.5 | |
| 2 | |
| 2 | |
| 670@20V | |
| 90 | |
| 2500 | |
| 5|7 | |
| 142|57 | |
| 16|19 | |
| 9|16 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 25@10V|31@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI7216DN-T1-E3 power MOSFET. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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