| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±12 | |
| 4.9 | |
| 36@10V | |
| 7@4.5V | |
| 1300 | |
| 10 | |
| 12 | |
| 30 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI7212DN-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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