| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | NRND |
| Código HTS | 8541.29.00.95 |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Process Technology | 0.18um |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Continuous Drain Current (A) | 14 |
| Maximum Drain-Source Resistance (mOhm) | 4.5@10V |
| Typical Gate Charge @ Vgs (nC) | 24@4.5V |
| Typical Gate to Drain Charge (nC) | 7.5 |
| Typical Gate to Source Charge (nC) | 10.5 |
| Typical Reverse Recovery Charge (nC) | 32 |
| Typical Output Capacitance (pF) | 500 |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 60 |
| Typical Turn-On Delay Time (ns) | 20 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 3.7@10V|4.8@4.5V |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
