| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 31 |
| Maximum Drain-Source Resistance (mOhm) | 11.4@10V |
| Typical Gate Charge @ Vgs (nC) | 21@4.5V|42@10V |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Input Capacitance @ Vds (pF) | 1900@15V |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 85 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.85(Max) mm |
| Package Width | 3.1(Max) mm |
| Package Length | 3.3(Max) mm |
| PCB changed | 8 |
| Supplier Package | HSMT EP |
| Pin Count | 8 |
