| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 22 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 4@10V |
| Typical Gate Charge @ Vgs (nC) | 16@4.5V|34@10V |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate to Drain Charge (nC) | 5.1 |
| Typical Gate to Source Charge (nC) | 5.6 |
| Typical Reverse Recovery Charge (nC) | 32 |
| Typical Input Capacitance @ Vds (pF) | 2200@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 17@50V |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Output Capacitance (pF) | 900 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Typical Turn-On Delay Time (ns) | 10 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 820 |
| Typical Diode Forward Voltage (V) | 0.88 |
| Typical Reverse Recovery Time (ns) | 41 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 5.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| Pin Count | 5 |
| Lead Shape | No Lead |
