Un 25-50% de rebaja
onsemiNTHS4101PT1GMOSFETs
Trans MOSFET P-CH 20V 4.8A 8-Pin Chip FET T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Hex Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.5 | |
| -55 to 150 | |
| 4.8 | |
| 100 | |
| 1 | |
| 34@4.5V | |
| 25@4.5V | |
| 7 | |
| 4 | |
| 2100@16V | |
| 200@16V | |
| 0.45 | |
| 290 | |
| 2500 | |
| 60 | |
| 28 | |
| 75 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 42@1.8V|30@2.5V|21@4.5V | |
| 8 | |
| 190 | |
| 95 | |
| 0.8 | |
| 1.5 | |
| 1.2 | |
| Mounting | Surface Mount |
| Package Height | 1.05 mm |
| Package Width | 1.65 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | Chip FET |
| 8 | |
| Lead Shape | Flat |
Compared to traditional transistors, NTHS4101PT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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