onsemiNST65010MW6T1GGP BJT

Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R

Do you require a transistor in your circuit operating in the high-voltage range? This NST65010MW6T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 0 V. Its maximum power dissipation is 0 mW. It has a maximum collector emitter voltage of 0 V and a maximum emitter base voltage of 0 V. This bipolar junction transistor has a minimum operating temperature of 0 °C and a maximum of 50 °C.

Import TariffMay apply to this part

9 piezas: Se puede enviar en 2 días

    Total$0.02Price for 1

    • Service Fee  $7.00

      Se puede enviar en 2 días

      Ships from:
      Estados Unidos de América
      Date Code:
      2241+
      Manufacturer Lead Time:
      28 semanas
      Minimum Of :
      1
      Maximum Of:
      9
      Country Of origin:
      China
         
      • Price: $0.0234
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar en 2 días

      Ships from:
      Estados Unidos de América
      Date Code:
      2241+
      Manufacturer Lead Time:
      28 semanas
      Country Of origin:
      China
      • In Stock: 9 piezas
      • Price: $0.0234

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