onsemiNJVMJB41CT4GGP BJT
Trans GP BJT NPN 100V 6A 2000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| -65 to 150 | |
| 1.5@600mA@6A | |
| 6 | |
| 30@0.3A@4V|15@3A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.29(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN NJVMJB41CT4G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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