| Compliant with Exemption | |
| EAR99 | |
| Active | |
| NJL1302DG | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 260 | |
| 260 | |
| 5 | |
| 3@1A@10A | |
| 15 | |
| 50000 | |
| 75@500mA@5V|75@1A@5V|75@3A@5V|75@5A@5V|45@8A@5V | |
| 200000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 26.59(Max) mm |
| Package Width | 5.31(Max) mm |
| Package Length | 20.29(Max) mm |
| PCB changed | 5 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| 5 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP NJL1302DG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 260 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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