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onsemiMJE371GGP BJT
Trans GP BJT PNP 40V 4A 4000mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 4 | |
| 4 | |
| 100000 | |
| 40@1A@1V | |
| 4000 | |
| -65 | |
| 150 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 11.1(Max) |
| Package Width | 3(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP MJE371G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 4000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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