| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 250 | |
| 5 | |
| 1.4@0.8A@8A|4@3.2A@16A | |
| 16 | |
| 15@8A@4V|5@16A@4V | |
| 250000 | |
| -65 | |
| 200 | |
| Tray | |
| Mounting | Through Hole |
| Package Height | 8.51(Max) mm |
| Package Width | 26.67(Max) mm |
| Package Length | 39.37 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
Compared to other transistors, the PNP MJ15025G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250000 mW. The component will be shipped in tray format. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |
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