| RoHS (Unión Europea) | Not Compliant |
| ECCN (Estados Unidos) | 3A001a.1.c. |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 200 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain-Source Resistance (mOhm) | 830@10V |
| Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 34.8(Max) |
| Typical Input Capacitance @ Vds (pF) | 700@25V |
| Maximum Power Dissipation (mW) | 25000 |
| Typical Fall Time (ns) | 80(Max) |
| Typical Rise Time (ns) | 100(Max) |
| Typical Turn-Off Delay Time (ns) | 80(Max) |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Military |
| Diameter | 9.39(Max) mm |
| Mounting | Through Hole |
| Package Height | 4.57(Max) mm |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
