| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.55 |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Process Technology | Trench |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 44 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 30@10V |
| Typical Gate Charge @ Vgs (nC) | 27.4@10V |
| Typical Gate Charge @ 10V (nC) | 27.4 |
| Typical Gate to Drain Charge (nC) | 9 |
| Typical Gate to Source Charge (nC) | 8.8 |
| Typical Reverse Recovery Charge (nC) | 144 |
| Typical Input Capacitance @ Vds (pF) | 1567@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 47@25V |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Output Capacitance (pF) | 200 |
| Maximum Power Dissipation (mW) | 130000 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 47 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Turn-On Delay Time (ns) | 21 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 110 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Reverse Recovery Time (ns) | 60 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-252 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
