| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 1.6(Min) | |
| 10000@0V | |
| 27@5V | |
| 645@10V | |
| 100000 | |
| 41 | |
| 65 | |
| 34 | |
| 27 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Create an effective common drain amplifier using this IXTY1R6N100D2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 100000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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