| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| ±20 | |
| 6 | |
| 2600@10V | |
| 56@10V | |
| 56 | |
| 1950@25V | |
| 300000 | |
| 18 | |
| 33 | |
| 42 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
Increase the current or voltage in your circuit with this IXTH6N120 power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.