| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 1.4 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 5 |
| Maximum Drain-Source Resistance (mOhm) | 13000@10V |
| Typical Gate Charge @ Vgs (nC) | 24.8@10V |
| Typical Gate Charge @ 10V (nC) | 24.8 |
| Typical Gate to Drain Charge (nC) | 12.8 |
| Typical Gate to Source Charge (nC) | 4.4 |
| Typical Input Capacitance @ Vds (pF) | 666@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 7.6@25V |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Output Capacitance (pF) | 36 |
| Maximum Power Dissipation (mW) | 86000 |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 78 |
| Typical Turn-On Delay Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 10500@10V |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 3 |
| Typical Gate Plateau Voltage (V) | 4.75 |
| Typical Reverse Recovery Time (ns) | 900 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.29(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| Pin Count | 3 |
