| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 0.8(Min) | |
| 21000@0V | |
| 14.6@5V | |
| 325@25V | |
| 60000 | |
| 48 | |
| 57 | |
| 34 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.7(Max) mm |
| Package Width | 9.4(Max) mm |
| Package Length | 10.41(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 |
This IXTA08N100D2 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 60000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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