| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 2500 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 5 |
| Maximum Drain-Source Resistance (mOhm) | 450000@10V |
| Typical Gate Charge @ Vgs (nC) | 7.4@10V |
| Typical Gate Charge @ 10V (nC) | 7.4 |
| Typical Gate to Drain Charge (nC) | 5.3 |
| Typical Gate to Source Charge (nC) | 0.7 |
| Typical Input Capacitance @ Vds (pF) | 116@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@25V |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Output Capacitance (pF) | 8 |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Fall Time (ns) | 33 |
| Typical Rise Time (ns) | 19 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Typical Turn-On Delay Time (ns) | 19 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Reverse Recovery Time (ns) | 1500 |
| Maximum Diode Forward Voltage (V) | 2 |
| Mounting | Surface Mount |
| Package Height | 4.7(Max) |
| Package Width | 9.4(Max) |
| Package Length | 10.2(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-263ABVHV |
| Pin Count | 3 |
