| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 6 | |
| 2000@10V | |
| 88@10V | |
| 88 | |
| 2600@25V | |
| 180000 | |
| 60 | |
| 40 | |
| 100 | |
| 35 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
Make an effective common gate amplifier using this IXFH6N100 power MOSFET from Ixys Corporation. Its maximum power dissipation is 180000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.