| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | NRND |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1000 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 38 |
| Maximum Drain-Source Resistance (mOhm) | 250@10V |
| Typical Gate Charge @ Vgs (nC) | 250@10V |
| Typical Gate Charge @ 10V (nC) | 250 |
| Typical Input Capacitance @ Vds (pF) | 7200@25V |
| Maximum Power Dissipation (mW) | 890000 |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 28 |
| Typical Turn-Off Delay Time (ns) | 57 |
| Typical Turn-On Delay Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Through Hole |
| Package Height | 26.59(Max) |
| Package Width | 5.31(Max) |
| Package Length | 20.29(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | PLUS 264 |
| Pin Count | 3 |
