| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | NRND |
| Código HTS | COMPONENTS |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 25 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.35 |
| Operating Junction Temperature (°C) | -40 to 150 |
| Maximum Continuous Drain Current (A) | 38 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 1.25@10V |
| Typical Gate Charge @ Vgs (nC) | 46@4.5V |
| Typical Gate to Drain Charge (nC) | 14 |
| Typical Gate to Source Charge (nC) | 14 |
| Typical Reverse Recovery Charge (nC) | 31 |
| Typical Switch Charge (nC) | 20.6 |
| Typical Input Capacitance @ Vds (pF) | 6750@13V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 730@13V |
| Minimum Gate Threshold Voltage (V) | 1.35 |
| Typical Output Capacitance (pF) | 1700 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 37 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 0.95@10V|1.6@4.5V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 300 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Maximum Gate Resistance (Ohm) | 2.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 0.53(Max) |
| Package Width | 5.05(Max) |
| Package Length | 5.45(Max) |
| PCB changed | 7 |
| Supplier Package | Direct-FET MX |
| Pin Count | 7 |
| Lead Shape | No Lead |
