Infineon Technologies AGIPW65R029CFD7XKSA1MOSFETs

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.

Infineon’s CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications. Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Summary of Features

  • • Ultrafast body diode and very low Qrr
  • • 650V breakdown voltage
  • • Significantly reduced switching losses compared to competition/li>
  • • Lowest RDS(on) dependency over temperature

Benefits

  • • Excellent hard-commutation ruggedness
  • • Extra safety margin for designs with increased bus voltage
  • • Enabling increased power density
  • • Outstanding light-load efficiency in industrial SMPS applications
  • • Improved full-load efficiency in industrial SMPS applications
  • • Price competitiveness compared to alternative offerings in the market

Potential Applications

  • • Fast EV charging
  • • Server power supply
  • • Solutions for solar energy systems
  • • Telecom infrastructure

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177 piezas: Se puede enviar mañana

    Total$6.04Price for 1

    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2305+
      Manufacturer Lead Time:
      17 semanas
      Country Of origin:
      Alemania
      • In Stock: 177 piezas
      • Price: $6.041

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