Infineon Technologies AGIPP60R125CPXKSA1MOSFETs
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 25 | |
| 125@10V | |
| 53@10V | |
| 53 | |
| 2500@100V | |
| 208000 | |
| 5 | |
| 5 | |
| 50 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.25 mm |
| Package Width | 4.4 mm |
| Package Length | 10 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPP60R125CPXKSA1 power MOSFET. Its maximum power dissipation is 208000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.

