Infineon Technologies AGIPB65R110CFDAATMA1MOSFETs
Trans MOSFET N-CH 650V 31.2A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| 31.2 | |
| 100 | |
| 1.5 | |
| 110@10V | |
| 118@10V | |
| 118 | |
| 3240@100V | |
| 277800 | |
| 6 | |
| 11 | |
| 68 | |
| 16 | |
| -40 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this IPB65R110CFDAATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 277800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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