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Infineon Technologies AGIPB60R099CPAATMA1MOSFETs
Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 31 | |
| 105@10V | |
| 60@10V | |
| 60 | |
| 2800@100V | |
| 255000 | |
| 5 | |
| 5 | |
| 60 | |
| 10 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 90@10V | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB60R099CPAATMA1 power MOSFET. Its maximum power dissipation is 255000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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