| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | NRND |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 47 |
| Maximum Drain-Source Resistance (mOhm) | 45@10V |
| Typical Gate Charge @ Vgs (nC) | 150@10V |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Input Capacitance @ Vds (pF) | 6800@100V |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Typical Turn-On Delay Time (ns) | 30 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Through Hole |
| Package Height | 20.88 mm |
| Package Width | 5.03 mm |
| Package Length | 19.91 mm |
| PCB changed | 5 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | ISOPLUS I4 |
| Pin Count | 5 |
