| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Obsolete |
| Código HTS | COMPONENTS |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Continuous Drain Current (A) | 23 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 3.9@10V |
| Typical Gate Charge @ Vgs (nC) | 56@5V|106@10V |
| Typical Gate Charge @ 10V (nC) | 106 |
| Typical Gate to Drain Charge (nC) | 23 |
| Typical Gate to Source Charge (nC) | 15 |
| Typical Reverse Recovery Charge (nC) | 21(Max) |
| Typical Input Capacitance @ Vds (pF) | 5200@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 570@15V |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Output Capacitance (pF) | 970 |
| Maximum Power Dissipation (mW) | 160000 |
| Typical Fall Time (ns) | 47 |
| Typical Rise Time (ns) | 98 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Typical Turn-On Delay Time (ns) | 10 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 3.2@10V|3.8@4.5V |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 43 |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Reverse Recovery Time (ns) | 37 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.67(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
