onsemiEMG2DXV5T5GBJT digital
Trans Digital BJT NPN 50V 0.1A 338mW 5-Pin SOT-553 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual Common Emitter | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 47 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.55 mm |
| Package Width | 1.2 mm |
| Package Length | 1.6 mm |
| PCB changed | 5 |
| Standard Package Name | SOT |
| Supplier Package | SOT-553 |
| 5 | |
| Lead Shape | Flat |
Compared to traditional BJ transistors, the NPN EMG2DXV5T5G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual common emitter configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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