Diodes IncorporatedDMN10H120SFG-13MOSFETs
Trans MOSFET N-CH 100V 3.8A 8-Pin PowerDI EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| 3.8 | |
| 100 | |
| 1 | |
| 110@10V | |
| 5.2@4.5V|10.6@10V | |
| 10.6 | |
| 549@50V | |
| 2400 | |
| 2.5 | |
| 1.8 | |
| 11.5 | |
| 3.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.8 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Supplier Package | PowerDI EP |
| 8 | |
| Lead Shape | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the DMN10H120SFG-13 power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2300 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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