| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.1 | |
| 100 | |
| 100 | |
| 1 | |
| 2.9@10V | |
| 25@4.5V|52@10V | |
| 52 | |
| 8.4 | |
| 10.3 | |
| 3900@20V | |
| 259000 | |
| 9.3 | |
| 7.3 | |
| 33 | |
| 11 | |
| -55 | |
| 175 | |
| Tube | |
| 1.8 | |
| Mounting | Through Hole |
| Package Height | 9.25(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD18502KCS power MOSFET is for you. Its maximum power dissipation is 216000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
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