| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±10 | |
| 16 | |
| 8.8@8V | |
| 3.6@4.5V | |
| 1.1 | |
| 580@15V | |
| 3000 | |
| 3.7 | |
| 12 | |
| 10.5 | |
| 6.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.6 |
This CSD17322Q5A power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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