| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 10 | |
| 1.4 | |
| -55 to 150 | |
| 60 | |
| 100 | |
| 1 | |
| 4@8V | |
| 6.2@4.5V | |
| 1.1 | |
| 1.8 | |
| 21 | |
| 1020@12.5V | |
| 50@12.5V | |
| 0.9 | |
| 740 | |
| 2800 | |
| 6.3 | |
| 15 | |
| 13 | |
| 5.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5@3V|4@4.5V|3.4@8V | |
| 2.8 | |
| 240 | |
| 55 | |
| 0.85 | |
| 1.5 | |
| 16 | |
| 1 | |
| 1.2 | |
| 2.8 | |
| 10 | |
| 22 | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 3.4(Max) mm |
| Package Length | 3.4(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
Compared to traditional transistors, CSD16327Q3 power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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