| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 10 | |
| 1.4 | |
| 21 | |
| 5@8V | |
| 6.8@4.5V | |
| 1.3 | |
| 2.4 | |
| 19 | |
| 1050@12.5V | |
| 740 | |
| 3100 | |
| 3.7 | |
| 10.7 | |
| 12.3 | |
| 6.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.4@3V|4.6@4.5V|3.9@8V | |
| 1.1 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 6 |
| Package Length | 5 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD16322Q5 power MOSFET is for you. Its maximum power dissipation is 3100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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