| Estatus de pieza | Active |
| Código HTS | 8504.40.95.80 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 1051(Typ) |
| Maximum Drain-Source Resistance (mOhm) | 1.7@15V |
| Typical Gate Charge @ Vgs (nC) | 2784@15V |
| Typical Input Capacitance @ Vds (pF) | 94900@800V |
| Maximum Power Dissipation (mW) | 2540000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Temperature Grade | Industrial |
