| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Maximum Continuous Drain Current (A) | 450 |
| Maximum Drain-Source Resistance (mOhm) | 3.4@15V |
| Typical Gate Charge @ Vgs (nC) | 1300@15V |
| Typical Input Capacitance @ Vds (pF) | 38000@800V |
| Maximum Power Dissipation (mW) | 1670000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Industrial |
| Packaging | Box |
| Mounting | Screw |
| Package Height | 15.75 mm |
| Package Width | 53 mm |
| Package Length | 80 mm |
| PCB changed | 11 |
| Pin Count | 11 |
