| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 22 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 80 |
| Maximum Gate-Source Leakage Current (nA) | 500 |
| Maximum IDSS (uA) | 1200 |
| Typical Input Capacitance @ Vds (pF) | 8000@10V |
| Maximum Power Dissipation (mW) | 600000 |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 80 |
| Typical Turn-On Delay Time (ns) | 20 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tray |
| Mounting | Screw |
| Package Height | 16 mm |
| Package Width | 45.6 mm |
| Package Length | 122 mm |
| PCB changed | 10 |
| Pin Count | 10 |
