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onsemiBCW65ALT1GGP BJT
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 32 | |
| 5 | |
| 2@50mA@500mA | |
| 0.3(Typ)@10mA@100mA|0.7(Typ)@50mA@500mA | |
| 0.8 | |
| 35@100uA@10V|75@10mA@1V|100@100mA@1V|35@500mA@2V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Use this versatile NPN BCW65ALT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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