onsemiBC846BWT1GGP BJT

Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SC-70 T/R

Compared to other transistors, the NPN BC846BWT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.

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No Stock Available

Quantity Increments of 3000 Minimum 30000
  • Date Code:
    2528+
    Manufacturer Lead Time:
    30 semanas
    Country Of origin:
    Malaisia
    • Price: $0.0108
    1. 30000+$0.0108
    2. 75000+$0.0107
    3. 150000+$0.0106
    4. 300000+$0.0105

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