Alpha and Omega SemiconductorAOT11S60LMOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 11 | |
| 399@10V | |
| 11@10V | |
| 11 | |
| 545@100V | |
| 178000 | |
| 20 | |
| 20 | |
| 59 | |
| 20 | |
| -55 | |
| 150 | |
| 350@10V | |
| Mounting | Through Hole |
| Package Height | 9.14 |
| Package Width | 4.45 |
| Package Length | 10.03 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
This AOT11S60L power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 178000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.