| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.4 | |
| 50 | |
| 100 | |
| 1 | |
| 8.5@10V | |
| 26.5@10V | |
| 26.5 | |
| 1871@40V | |
| 6300 | |
| 5.5 | |
| 8.5 | |
| 21.5 | |
| 11.5 | |
| -55 | |
| 150 | |
| 6.8@10V|8.7@6V | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | DFN EP |
| 8 | |
| Lead Shape | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The AON7280 power MOSFET from Alpha & Omega Semiconductor provides the solution. Its maximum power dissipation is 83000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
| EDA / CAD Models |
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