| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | LTB |
| Código HTS | EA |
| Automotive | Yes |
| PPAP | Unknown |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Hex |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 6 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 22 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 379 |
| Maximum Drain-Source Resistance (mOhm) | 3.45@18V |
| Typical Gate Charge @ Vgs (nC) | 944@18V |
| Typical Input Capacitance @ Vds (pF) | 28070@800V |
| Maximum Power Dissipation (mW) | 704000 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tray |
| Mounting | Screw |
| Package Length | 154.5 |
| PCB changed | 39 |
| Pin Count | 39 |